RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: High Diode MMBTA92
Transistor Type: NPN
Operating Temperature: +150°C@(Tj)
Collector Current (Ic): 200mA
Power Dissipation (Pd): 300mW
Transition Frequency (fT): 50MHz
DC Current Gain (hFE@Ic,Vce): 100@10mA,10V
Collector Cut-Off Current (Icbo): 250nA
Collector-Emitter Breakdown Voltage (Vceo): 300V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 200mV@20mA,2mA
Package: SOT-23(TO-236)
Manufacturer: High Diode
Series: -
Packaging: Cut Tape (CT)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Power - Max: 350mW
Frequency - Transition: 50MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: MMBT
detail: Bipolar (BJT) Transistor PNP 300V 500mA 50MHz 350mW Surface Mount SOT-23-3